Al2O3 Formation by Wet Oxidation of AlAs for GaAs MOS devices
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yong Soo Lee | - |
| dc.date.accessioned | 2013-03-14T20:49:12Z | - |
| dc.date.available | 2013-03-14T20:49:12Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1994 | - |
| dc.identifier.citation | Proceedings of 1994 Internation Electron Devices and Materials Symposium, v., no., pp.2004-03-10 - 2004-03-13 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/113136 | - |
| dc.language | ENG | - |
| dc.title | Al2O3 Formation by Wet Oxidation of AlAs for GaAs MOS devices | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 2004-03-10 | - |
| dc.citation.endingpage | 2004-03-13 | - |
| dc.citation.publicationname | Proceedings of 1994 Internation Electron Devices and Materials Symposium | - |
| dc.identifier.conferencecountry | Taiwan, Province of China | - |
| dc.contributor.localauthor | Yong Soo Lee | - |
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