Al2O3 Formation by Wet Oxidation of AlAs for GaAs MOS devices

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Issue Date
1994
Language
ENG
Citation

Proceedings of 1994 Internation Electron Devices and Materials Symposium, pp.2004-03-10 - 2004-03-13

URI
http://hdl.handle.net/10203/113136
Appears in Collection
EE-Conference Papers(학술회의논문)
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