DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HG | ko |
dc.contributor.author | Lee, D | ko |
dc.contributor.author | Kim, Sehun | ko |
dc.contributor.author | Hwang, C | ko |
dc.date.accessioned | 2009-09-18T04:54:38Z | - |
dc.date.available | 2009-09-18T04:54:38Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-12 | - |
dc.identifier.citation | SURFACE SCIENCE, v.596, no.1-3, pp.39 - 44 | - |
dc.identifier.issn | 0039-6028 | - |
dc.identifier.uri | http://hdl.handle.net/10203/11306 | - |
dc.description.abstract | We used variable-temperature scanning tunneling microscopy to investigate two types of Ce-induced 5 x 2 structures reconstructed on Si(111) at coverages of 0.5 ML (low) and 3.0 ML (high) after annealing at 600 degrees C. At both Cc coverages, one-dimensional atomic chains formed upon Ce deposition on Si(111). The atomic densities of Ce in the one-dimensional chains varied with Ce deposition coverage. Based on the scanning tunneling microscopy images, we suggest two structural models of the one-dimensional Cc atomic chains. (c) 2005 Elsevier B.V. All rights reserved. | - |
dc.description.sponsorship | the KOSEF through the Center for Nanotubes and Nanostructured Composites, the Brain Korea 21 Project, the Advanced Backbone IT Technology Development Project of the Ministry of Information and Communication, the National R&D Project for Nanoscience and Nanotechnology | en |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.subject | INTERFACE | - |
dc.subject | SILICIDES | - |
dc.subject | SURFACE | - |
dc.subject | SILICON | - |
dc.subject | EU | - |
dc.subject | GD | - |
dc.title | One-dimensional chain structures produced by Ce on Si(111) | - |
dc.type | Article | - |
dc.identifier.wosid | 000233495900007 | - |
dc.identifier.scopusid | 2-s2.0-27744459598 | - |
dc.type.rims | ART | - |
dc.citation.volume | 596 | - |
dc.citation.issue | 1-3 | - |
dc.citation.beginningpage | 39 | - |
dc.citation.endingpage | 44 | - |
dc.citation.publicationname | SURFACE SCIENCE | - |
dc.identifier.doi | 10.1016/j.susc.2005.09.001 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Kim, Sehun | - |
dc.contributor.nonIdAuthor | Lee, HG | - |
dc.contributor.nonIdAuthor | Lee, D | - |
dc.contributor.nonIdAuthor | Hwang, C | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | STM | - |
dc.subject.keywordAuthor | XPS | - |
dc.subject.keywordAuthor | atomic row | - |
dc.subject.keywordAuthor | Ce silicide | - |
dc.subject.keywordAuthor | one-dimensional chain structure | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | SILICIDES | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | EU | - |
dc.subject.keywordPlus | GD | - |
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