Showing results 1 to 10 of 10
Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis Kim, IJ; Cho, Yong-Hoon; Kim, KS; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.68, no.24, pp.3488 - 3490, 1996-06 |
Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures an a GaAs substrate Cho, Yong-Hoon; Choe, BD; Lim, H, APPLIED PHYSICS LETTERS, v.69, no.24, pp.3740 - 3742, 1996-12 |
Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface Cho, Yong-Hoon; Kim, DS; Choe, BD; Lim, H; Lee, JI; Kim, D, PHYSICAL REVIEW B, v.56, pp.R4375 - R4378, 1997 |
Effects of substrate misorientation on the formation and characteristics of self-assembled InP/InGaP quantum dots Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.4A, pp.366 - 368, 1998-04 |
Effects of substrate orientation on formation and characteristics of self-assembeld InP/InGaP quantum dot lasers Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG; Choo, AG; Kim, TI, Optoelectronics and Communications Conference (OECC) ’97 Technical Digest, pp.470 -, 1997 |
Femtosecond degenerate four-wave mixing in 500 mu m undoped GaAs and 350 mu m undoped InP far below band gap Yu, S; Kim, D; Kim, DS; Lee, YH; Cho, Yong-Hoon; Choe, BD; Lee, JH, JOURNAL OF APPLIED PHYSICS, v.81, no.10, pp.6928 - 6933, 1997-05 |
Interface states in In0.5Ga0.5P/AlxGa1-xAs heterostructures grown by liquid phase epitaxy Cho, Yong-Hoon; Choe, BD; Kim, Y; Lim, H, JOURNAL OF APPLIED PHYSICS, v.81, no.11, pp.7362 - 7366, 1997-06 |
Optical investigation of GaAs/InGaP heterointerfaces grown by metalorganic vapor phase epitaxy Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG; Yu, JS; Choo, AG; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.30, pp.160 - 162, 1997-06 |
Probing optical-phonon propagation in GaAs/AlxGa1-xAs quantum-well samples via their nonequilibrium population Yu, PY; Su, ZP; Kim, DS; Khim, JS; Lim, YS; Yee, YH; Cho, Yong-Hoon; et al, PHYSICAL REVIEW B, v.54, no.15, pp.10742 - 10750, 1996-10 |
Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-II heterostructures Cho, Yong-Hoon; Song, JJ; Lim, H; Choe, BD; Lee, JI; Kim, D, APPLIED PHYSICS LETTERS, v.73, no.9, pp.1245 - 1247, 1998-08 |
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