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1
Increase in In0.32Ga0.68P band-gap energy due to the electron capturing of DX centers

N. Y. Lee; Park, Hae Yong; S. D. Kwon; H. K. Shin; H. Lim; Kim, Jae Eun, SOLID STATE COMMUNICATIONS, v.102, no.10, pp.763 - 767, 1997-06

2
Photoreflectance Study on GaAs:Si

C. Lee; N. Y. Lee; J. E. Kim; D. H. Kwak; H. C. Lee; 박해용, 새물리, v.34, pp.562 - 566, 1994

3
POSSIBLE SITE OF CO2+ IONS IN ZN1-XCDXGA2SE4 CRYSTALS

I. Hwang; N. Y. Lee; H. Kim; Kim, Jae Eun; H. G. Kim; C. D. Kim; W. T. Kim; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.32, pp.552 - 554, 1993

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