E-PLOT : A New Method Characterizing the Substrate Current and the Saturation Voltage of Fresh and Hot-Electron Stressed nMOSFET

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dc.contributor.authorKwyro Lee-
dc.contributor.authorKim, Shi Ho-
dc.date.accessioned2013-03-14T06:04:25Z-
dc.date.available2013-03-14T06:04:25Z-
dc.date.created2012-02-06-
dc.date.issued1994-
dc.identifier.citation대한전자공학회 학술대회 , v., no., pp.119 - 120-
dc.identifier.urihttp://hdl.handle.net/10203/105956-
dc.languageKOR-
dc.publisher대한전자공학회-
dc.titleE-PLOT : A New Method Characterizing the Substrate Current and the Saturation Voltage of Fresh and Hot-Electron Stressed nMOSFET-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage119-
dc.citation.endingpage120-
dc.citation.publicationname대한전자공학회 학술대회-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorKwyro Lee-
dc.contributor.nonIdAuthorKim, Shi Ho-
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EE-Conference Papers(학술회의논문)
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