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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

GaAs MESFET with very short channel length fabricated by selective MOCVD technique

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dc.contributor.authorKim Chang-Tae-
dc.contributor.authorHong Chang-Hee-
dc.contributor.authorKwon, Young Se-
dc.date.accessioned2013-03-14T03:44:59Z-
dc.date.available2013-03-14T03:44:59Z-
dc.date.created2012-02-06-
dc.date.issued1991-08-27-
dc.identifier.citation23rd International Conference on Solid State Devices and Materials - SSDM '91, v., no., pp.399 - 401-
dc.identifier.urihttp://hdl.handle.net/10203/104932-
dc.languageENG-
dc.titleGaAs MESFET with very short channel length fabricated by selective MOCVD technique-
dc.typeConference-
dc.identifier.scopusid2-s2.0-0025842203-
dc.type.rimsCONF-
dc.citation.beginningpage399-
dc.citation.endingpage401-
dc.citation.publicationname23rd International Conference on Solid State Devices and Materials - SSDM '91-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.nonIdAuthorKim Chang-Tae-
dc.contributor.nonIdAuthorHong Chang-Hee-
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EE-Conference Papers(학술회의논문)
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