DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim Chang-Tae | - |
dc.contributor.author | Hong Chang-Hee | - |
dc.contributor.author | Kwon, Young Se | - |
dc.date.accessioned | 2013-03-14T03:44:59Z | - |
dc.date.available | 2013-03-14T03:44:59Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1991-08-27 | - |
dc.identifier.citation | 23rd International Conference on Solid State Devices and Materials - SSDM '91, v., no., pp.399 - 401 | - |
dc.identifier.uri | http://hdl.handle.net/10203/104932 | - |
dc.language | ENG | - |
dc.title | GaAs MESFET with very short channel length fabricated by selective MOCVD technique | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-0025842203 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 399 | - |
dc.citation.endingpage | 401 | - |
dc.citation.publicationname | 23rd International Conference on Solid State Devices and Materials - SSDM '91 | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Kwon, Young Se | - |
dc.contributor.nonIdAuthor | Kim Chang-Tae | - |
dc.contributor.nonIdAuthor | Hong Chang-Hee | - |
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