GaAs MESFET with very short channel length fabricated by selective MOCVD technique
- Issue Date
- 1991-08-27
- Language
- ENG
- Citation
23rd International Conference on Solid State Devices and Materials - SSDM '91, pp.399 - 401
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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