GaAs MESFET with very short channel length fabricated by selective MOCVD technique

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Issue Date
1991-08-27
Language
ENG
Citation

23rd International Conference on Solid State Devices and Materials - SSDM '91, pp.399 - 401

URI
http://hdl.handle.net/10203/104932
Appears in Collection
EE-Conference Papers(학술회의논문)
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