Patterning of ferroelectric poly(vinylidene fluoride-trifluoroethylene) film for nonvolatile memory devices

Abstract

Ferroelectric polymer, poly(vinylidene fluoride-trifluoroethylene), was spin-coated to be a thin film. Afterward, solubility relations for several solvents were tested for photo-lithographical patterning of ferroelectric polymer film. Based on solubility relations, the conditions for microscale patterning of ferroelectric polymer film were established with commercialized photoresist and developer and stripper. On the finally pattered film, top electrode of Au was deposited through thermal evaporation and electric displacement-electric field (D-E) relation was measured. Compared to the not-patterned film, any chemical degradation was not found from hysteresis loop. Therefore, it is concluded that the ferroelectric polymer film can be patterned by ordinary photo-lithographical method without chemical degradation. (C) 2011 Elsevier B.V. All rights reserved.