We have synthesized epitaxially grown freestanding FeSi nanowires (NWs) on an m-Al2O3 substrate by using a catalyst-free chemical vapor transport method. FeSi NW growth ss initiated from FeSi nanocrystals, formed on a substrate in a characteristic shape with a specific orientation. Cross-section TEM analysis of seed crystals reveals the crystallographic structure and hidden geometry of the seeds. Close correlation of geometrical shapes and orientations of the observed nanocrystals with those of as-grown NWs indicates that directional growth of NWs is initiated from the epitaxially formed seed crystals. The diameter of NWs can be controlled by adjusting the composition of Si in a Si/C mixture. The epitaxial growth method for FeSi NWs via seed crystals could be employed to heteroepitaxial growth of other compound NWs.