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Showing results 1 to 2 of 2

1
Effects of Al Precursors on the Characteristics of Indium-Aluminum Oxide Semiconductor Grown by Plasma-Enhanced Atomic Layer Deposition

Lee, Seunghee; Kim, Miso; Mun, Geumbi; Ko, Jongbeom; Yeom, Hye-In; Lee, Gwang-Heum; Shong, Bonggeun; et al, ACS APPLIED MATERIALS & INTERFACES, v.13, no.33, pp.40134 - 40144, 2021-08

2
Reduction of charge trapping in HfO2 film on a Ge substrate by trimethylaluminum pretreatment

Lee, Jae Jin; Shin, Yunsang; Choi, Juyun; Kim, Hyoungsub; Hyun, Sangjin; Choi, Siyoung; Cho, Byung Jin; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.6, no.11, pp.439 - 441, 2012-11

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