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Improved Electrical Characteristics of Amorphous Oxide TFTs Based on TiOx Channel Layer Grown by Low-Temperature MOCVD Park, JW; Han, SW; Jeon, N; Jang, J; Yoo, Seunghyup, IEEE ELECTRON DEVICE LETTERS, v.29, no.12, pp.1319 - 1321, 2008-12 |
Improvement of On-Off-Current Ratio in TiOx Active-Channel TFTs Using N2O Plasma Treatment Park, JW; Lee, DY; Kwon, H; Yoo, Seunghyup, IEEE ELECTRON DEVICE LETTERS, v.30, pp.362 - 364, 2009-04 |
Performance Improvement of N-Type TiOx Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD Park, JW; Lee, D; Kwon, H; Yoo, Seunghyup; Huh, J, IEEE ELECTRON DEVICE LETTERS, v.30, no.7, pp.739 - 741, 2009-07 |
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