Browse by Subject oxygen vacancy
Showing results 1 to 16 of 16
Abnormal Thermal Instability of Al-InSnZnO Thin-Film Transistor by Hydroxyl-Induced Oxygen Vacancy at SiOx/Active Interface Jeon, Guk-Jin; Yang, Junghoon; Lee, Seung Hee; Jeong, Wooseok; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.42, no.3, pp.363 - 366, 2021-03 |
| Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery Jeong, Yonghee; Kim, Hyunjin; Oh, Jungyeop; Choi, Sung-Yool; Park, Hamin, JOURNAL OF ELECTRONIC MATERIALS, v.52, no.6, pp.3914 - 3920, 2023-06 |
| Boosting Electrochemical CO2 Reduction to Methane via Tuning Oxygen Vacancy Concentration and Surface Termination on a Copper/Ceria Catalyst Patra, Kshirodra Kumar; Liu, Zhu; Lee, Hojeong; Hong, Seungwon; Song, Hakhyeon; Abbas, Hafiz Ghulam; Kwon, Youngkook; et al, ACS CATALYSIS, v.12, no.17, pp.10973 - 10983, 2022-09 |
| Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor Kim, Sungho; Choi, ShinHyun; Lu, Wei, ACS NANO, v.8, no.3, pp.2369 - 2376, 2014-03 |
| Configurable Crack Wall Conduction in a Complex Oxide Yeo, Youngki; Hwang, Soo-Yoon; Yeo, Jinwook; Kim, Jihun; Jang, Jinhyuk; Park, Heung-Sik; Kim, Yong-Jin; et al, NANO LETTERS, v.23, no.2, pp.398 - 406, 2023-01 |
| Crystalline Phase-Controlled High-Quality Hafnia Ferroelectric With RuO2 Electrode Goh, Youngin; Cho, Sung Hyun; Park, Sang-Hee Ko; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.8, pp.3431 - 3434, 2020-08 |
| Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network Kim, Gil Seop; Song, Hanchan; Lee, Yoon Kyeung; Kim, Ji Hun; Kim, Woohyun; Park, Tae Hyung; Kim, Hae Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.50, pp.47063 - 47072, 2019-12 |
| Effect of High Film Stress of Mo Source and Drain Electrodes on Electrical Characteristics of Al Doped InZnSnO TFTs Bae, Jaehan; Ma, Boo Soo; Jeon, Gukjin; Jeong, Wooseok; Je, Chang Han; Kim, Taek-Soo; Park, Sang-Hee Ko, IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1760 - 1763, 2019-11 |
| Effects of the Interfacial Layers on the Time-Dependent Leakage Current Characteristics of(Ba,Sr)TiO3 Thin Films J.H. Ahn; W.J. Lee; Kim, Ho Gi, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.12A, pp.6472 - 6475, 1998-12 |
| Effects of the oxygen vacancy concentration in InGaZnO-Based RRAM = InGaZnO물질기반의 RRAM 소자에 산소 결핍 농도의 효과에 관한 연구link Kim, Moon-Seok; 김문석; et al, 한국과학기술원, 2013 |
| Oxide Heterostructure Resistive Memory Yang, Yuchao; Choi, ShinHyun; Lu, Wei, NANO LETTERS, v.13, no.6, pp.2908 - 2915, 2013-06 |
| Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; Shin, Hunbeom; Lee, Sangho; Kim, Giuk; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01 |
| Oxygen-Related Defect Engineering of Amorphous Vanadium Pentoxide Cathode for Achieving High-Performance Thin-Film Aqueous Zinc-Ion Batteries Cho, Su-Ho; Park, Jun-Seob; Kim, Jong Heon; Chang, Yun-Hee; Ahn, Jaewan; Nam, Jong Seok; Jung, Ji-Won; et al, ACS APPLIED ENERGY MATERIALS, v.6, no.5, pp.2719 - 2727, 2023-03 |
| The effects of electric field and gate bias pulse on the migration and stability of ionized oxygen vacancies in amorphous In-Ga-Zn-O thin film transistors Oh, Young Jun; Noh, Hyeon-Kyun; Chang, Kee Joo, SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, v.16, no.3, pp.034902 - 034902, 2015-06 |
| Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping Kim, Sungho; Choi, ShinHyun; Lee, Jihang; Lu, Wei D., ACS NANO, v.8, no.10, pp.10262 - 10269, 2014-10 |
| 강유전막의 잔류 분극 상태와 내부 전계가 Pt/Pb(Zr,Ti)O3/Pt 커패시터의 수소 열화 특성에 미치는 영향 김동천; 이강운; 이원종, 한국재료학회지, v.12, no.1, pp.75 - 81, 2002-01 |
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