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Showing results 1 to 60 of 73

1
A NEW GAAS FIELD-EFFECT TRANSISTOR (FET) WITH DIPOLE BARRIER (DIB)

CHO, HR; JEON, KI; Hong, Songcheol; KWON, YS, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.33, no.1B, pp.775 - 778, 1994-01

2
Applicability of step-coverage Modeling to TiO2 thin films in atomic layer deposition

Kim, Ja-Yong; Kim, Jin-Hyock; Ahn, Ji-Hoon; Park, Pan-Kwi; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.12, pp.H1008 - H1013, 2007

3
APPLICATIONS OF RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION TECHNOLOGY TO ULSI MATERIAL PROCESSING AND DEVICE FABRICATION

SNNIKRISHNAN, U; Yoon, Giwan; KWONG, DL, THIN SOLID FILMS, v.241, no.1-2, pp.329 - 334, 1994-04

4
Atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Shin, JW; Lee, JeongYong; No, YS; Kim, TW; Choi, WK, JOURNAL OF MATERIALS RESEARCH, v.24, pp.2006 - 2010, 2009-06

5
Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol

Jeon, WS; Yang, S; Lee, CS; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.6, pp.306 - 310, 2002-06

6
Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

Maeng, W. J.; Choi, Dong-won; Park, Jozeph; Park, Jin-Seong, CERAMICS INTERNATIONAL, v.41, no.9, pp.10782 - 10787, 2015-11

7
Atomic layer deposition of nickel by the reduction of preformed nickel oxide

Chae, Junghun; Park, Hyuong-Sang; Kang, Sang-Won, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.5, no.6, pp.C64 - C66, 2002-06

8
Characteristics of ZnO thin films by means of plasma-enhanced atomic layer deposition

Park, Sang-Hee Ko; Hwang, Chi-Sun; Kwack, Ho-Sang; Lee, Jin-Hong; Chu, Hye Yong, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.10, pp.299 - 301, 2006

9
Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Yang, GM, APPLIED PHYSICS LETTERS, v.80, no.8, pp.1370 - 1372, 2002-02

10
Coexistence of a phase separation and an ordered structure in CdxZn1-xTe epilayers grown on GaAs (001) substrates

Lee, HS; Sohn, HS; Lee, JeongYong; Lee, KH; Kim, YH; Kim, TW; Kwon, MS; et al, JOURNAL OF APPLIED PHYSICS, v.99, pp.H61 - H64, 2006-05

11
Coexisting phenomena of the CuPt-type and the Cu3Au-type ordered structures near ZnTe/ZnSe heterointerfaces in ZnxCd1-xTe/ZnSySe1-y quantum wells

Kim, TW; Lee, DU; Choo, DC; Lim, YS; Lee, HS; Lee, JeongYong; Lim, H, SOLID STATE COMMUNICATIONS, v.117, no.8, pp.501 - 504, 2001-02

12
Comparison between ZnO films grown by atomic layer deposition using H2O or O-3 as oxidant

Kim, SK; Hwang, CS; Park, SHK; Yun, SJ, THIN SOLID FILMS, v.478, no.1-2, pp.103 - 108, 2005-05

13
Controlling preferred orientation of ZnO thin films by atomic layer deposition

Park, SHK; Lee, YE, JOURNAL OF MATERIALS SCIENCE, v.39, no.6, pp.2195 - 2197, 2004-03

14
Copper Seed Layer Deposition by a New Liquid Precursor

Kang, Sang-Woo; Shin, Yong-Hyeon; Kim, Jin-Tae; Yun, Ju-Young; Chang, Yun-Hee; Yang, Il-Doo, CHEMICAL VAPOR DEPOSITION, v.17, no.1-3, pp.65 - 68, 2011-03

15
CuAu-I-type ordered structures in InxAl1-xAs epilayers grown on (001) InP substrates

Lee, HS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.82, pp.2999 - 3001, 2003-05

16
Design and Growth of Quaternary Mg and Ga Codoped ZnO Thin Films with Transparent Conductive Characteristics

Shin, Seung Wook; Kim, In Young; Lee, Gyoung Hoon; Agawane, GL; Mohokar, AV; Heo, Gi-Seok; Kim, Jin Hyeok; et al, CRYSTAL GROWTH DESIGN, v.11, no.11, pp.4819 - 4824, 2011-11

17
Development of transparent conductive Mg and Ga co-doped ZnO thin films: Effect of Mg concentration

Shin, Seung Wook; Agawane, G. L.; Kim, In Young; Jo, Seung Hyun; Kim, Min Sung; Heo, Gi-Seok; Kim, Jin Hyeok; et al, SURFACE & COATINGS TECHNOLOGY, v.231, pp.364 - 369, 2013-09

18
Effect of ionization and acceleration of As-source beam on structural properties of low temperature grown GaAs

Roh, DW; Yun, SJ; Kim, K; Choi, JS; Choo, Woong Kil, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.31, no.1, pp.135 - 139, 1997-07

19
Effect of rapid thermal annealing on the structure and the electrical properties of atomic-layer-deposited Ta2O5 films

Kim, YS; Park, SHK; Yun, SJ; Kang, JS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.37, no.6, pp.975 - 979, 2000-12

20
Effect of Si doping on the structural and the optical properties in high-quality AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Kwack, HS; Cho, Yong-Hoon; Bae, SB; Oh, DK; Lee, KS; Kim, CS, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.46, pp.1137 - 1141, 2005-05

21
Effect of substrate temperature on the texture and structure of polycrystalline Si0.7Ge0.3 films deposited on SiO2 by molecular beam deposition

Kim, HS; Lee, JeongYong, THIN SOLID FILMS, v.350, no.1-2, pp.14 - 20, 1999-08

22
EFFECT OF SUBSTRATES ON THE GROWTH AND PROPERTIES OF LINBO3 FILMS BY THE SOL-GEL METHOD

Hur, NH; Park, YK; Won, DH; No, Kwangsoo, JOURNAL OF MATERIALS RESEARCH, v.9, no.4, pp.980 - 985, 1994-04

23
Effect of thermal annealing on the microstructural and electrical properties of Al-doped ZnO thin films grown on n-Si (100) substrates

Han, J. H.; No, Y. S.; Lee, JeongYong; Kim, T. W.; Kim, J. Y.; Choi, W. K., PHYSICA E-LOW-DIMENSIONAL SYSTEMS NANOSTRUCTURES, v.43, no.1, pp.256 - 260, 2010-11

24
Effect of UV-O-2, NF3/H-2 surface preparation on the crystalline defects in silicon homoepitaxy (Part I. A study on photochemical surface preparation in series)

Sun, MC; Kim, DoHyun; Kwon, SK, JOURNAL OF CRYSTAL GROWTH, v.237, no.2, pp.1399 - 1403, 2002-04

25
Effects of thermal annealing on the microstructural properties of the lower region in ZnO thin films grown on n-Si (001) substrates

Yuk, Jong Min; Lee, JeongYong; Kim, TW; Son, DI; Choi, WK, JOURNAL OF MATERIALS RESEARCH, v.23, no.4, pp.1082 - 1086, 2008-04

26
ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS

Choochon Lee, JOURNAL OF MATERIALS SCIENCE LETTERS, v.12, no.16, pp.1251 - 1252, 1993

27
Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing

Tabbal, Malek; Kim, Taegon; Woolf, David N.; Shin, Byungha; Aziz, Michael J., APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.98, no.3, pp.589 - 594, 2010-03

28
Fabrication of InGaAs-AlGaAs-GaAs integrated twin-guide corner reflector lasers using in situ laser reflectometry

Hong, SK; Kwon, Young Se, IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.3, pp.854 - 861, 1997-04

29
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Cho, HK; Lee, JeongYong; Yang, GM; Kim, CS, APPLIED PHYSICS LETTERS, v.79, no.2, pp.215 - 217, 2001-07

30
Formation mechanisms of ZnO amorphous layers due to thermal treatment of ZnO thin films grown on p-InP (100) substrates

Yuk, Jong Min; Lee, Jeong-Yong; No, Y. S.; Kim, T. W.; Choi, W. K., JOURNAL OF APPLIED PHYSICS, v.103, no.8, 2008-04

31
Formation of highly oriented diamond film an (100) silicon

Kim, YK; Lee, Jai Young, JOURNAL OF APPLIED PHYSICS, v.81, no.8, pp.3660 - 3666, 1997-04

32
Formation of misfit dislocations and stacking faults in high indium content InxGa1-xN layers grown by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, pp.165 - 169, 2001-12

33
Growth of textured c-axis normal Y1Ba2Cu3O7-delta thin films on yttria-stabilized zirconia substrates with crystalline axes tilted with respect to the surfaces

Kim, JH; Youm, Do-Jun, PHYSICA C, v.275, no.3-4, pp.273 - 278, 1997-02

34
High-efficiency micro-energy generation based on free-carrier-modulated ZnO:N piezoelectric thin films

Lee, Eunju; Park, Jaedon; Yim, Munhyuk; Jeong, Sangbeom; Yoon, Giwan, APPLIED PHYSICS LETTERS, v.104, no.21, 2014-05

35
High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate

Kim, YH; Lee, JeongYong; Noh, YG; Kim, MD, APPLIED PHYSICS LETTERS, v.90, pp.88 - +, 2007-06

36
Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition

Bae, Si-Young; Jung, Byung Oh; Lekhal, Kaddour; Kim, Sang-Yun; Lee, Jeong Yong; Lee, Dong-Seon; Deki, Manato; et al, CRYSTENGCOMM, v.18, no.9, pp.1505 - 1514, 2016

37
Improved microstructural properties of a ZnO thin film using a buffer layer in-situ annealed in argon ambient

Park, DJ; Lee, JeongYong; Park, TE; Kim, YY; Cho, HK, THIN SOLID FILMS, v.515, pp.6721 - 6725, 2007-06

38
InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K

Kang, Soo Seok; Geum, Dae-Myeong; Kwak, Kisung; Kang, Ji-Hoon; Shim, Cheol-Hwee; Hyun, HyeYoung; Kim, Sang Hyeon; et al, SCIENTIFIC REPORTS, v.9, 2019-09

39
Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

Maeng, W. J.; Choi, Dong-Won; Park, Jozeph; Park, Jin-Seong, JOURNAL OF ALLOYS AND COMPOUNDS, v.649, pp.216 - 221, 2015-11

40
Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition

Cho, HK; Lee, JeongYong; Kim, CS; Yang, GM, JOURNAL OF APPLIED PHYSICS, v.91, no.3, pp.1166 - 1170, 2002-02

41
Interfacial layer properties of HfO2 films formed by plasma-enhanced atomic layer deposition on silicon

Park, PK; Roh, JS; Choi, BH; Kang, SW, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.5, pp.F34 - F37, 2006-03

42
Low-Temperature and High-Quality Growth of Bi2O2 Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition

Kang, Minsoo; Chai, Hyun-Jun; Jeong, Han Beom; Park, Cheolmin; Jung, In-young; Park, Eunpyo; Çiçek, Mert Miraç; et al, ACS NANO, v.15, no.5, pp.8715 - 8723, 2021-05

43
Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN microstructures

Kim, CS; Hong, YK; Hong, CH; Suh, EK; Lee, HJ; Kim, MH; Cho, HK; et al, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, v.228, no.1, pp.183 - 186, 2001-11

44
Nonlinear photonic diode behavior in energy-graded core-shell quantum well semiconductor rod

Ko, Suk-Min; Gong, Su-Hyun; Cho, Yong-Hoon, NANO LETTERS, v.14, no.9, pp.4937 - 4942, 2014-09

45
Optical properties of laterally overgrown GaN pyramids grown on (111) silicon substrate

Cho, Yong-Hoon; Kwon, BJ; Kim, HM; Kang, TW; Song, JJ; Yang, W, CURRENT APPLIED PHYSICS, v.2, pp.515 - 519, 2002

46
p-type doping and compensation in ZnO

Lee, WJ; Kang, J; Chang, Kee-Joo, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, pp.196 - 201, 2008-07

47
Performance modulation of transparent ALD indium oxide films on flexible substrates: transition between metal-like conductor and high performance semiconductor states

Sheng, Jiazhen; Choi, Dong-Won; Lee, Seung-Hwan; Park, Jozeph; Park, Jin-Seong, JOURNAL OF MATERIALS CHEMISTRY C, v.4, no.32, pp.7571 - 7576, 2016

48
Phase separation and stacking fault of InxGa1-xN layers grown on thick GaN and sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, JOURNAL OF CRYSTAL GROWTH, v.220, no.3, pp.197 - 203, 2000-12

49
Red Emission of InGaN/GaN Double Heterostructures on GaN Nanopyramid Structures

Ko, Young-Ho; Kim, Je-Hyung; Gong, Suhyun; Kim, Joosung; Kim, Taek; Cho, Yong-Hoon, ACS PHOTONICS, v.2, no.4, pp.515 - 520, 2015-04

50
Shrinking Core Model for Knudsen Diffusion-Limited Atomic Layer Deposition on a Nanoporous Monolith with an Ultrahigh Aspect Ratio

Lee H.-Y.; An C.J.; Piao S.J.; Ahn D.Y.; Kim M.-T.; Min Y.-S., JOURNAL OF PHYSICAL CHEMISTRY C, v.114, no.43, pp.18601 - 18606, 2010

51
Spatially resolved cathodoluminescence of laterally overgrown GaN pyramids on (111) silicon substrate: Strong correlation between structural and optical properties

Cho, Yong-Hoon; Kim, HM; Kang, TW; Song, JJ; Yang, W, APPLIED PHYSICS LETTERS, v.80, no.7, pp.1141 - 1143, 2002-02

52
Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11-22) ones

Leroux, M.; Brault, J.; Kahouli, A.; Maghraoui, D.; Damilano, B.; de Mierry, P.; Korytov, M.; et al, JOURNAL OF APPLIED PHYSICS, v.116, no.3, pp.034308-1 - 034308-8, 2014-07

53
Step coverage modeling of thin films in atomic layer deposition

Kim, Ja-Yong; Ahn, Ji-Hoon; Kang, Sang-Won; Kim, Jin-Hyock, JOURNAL OF APPLIED PHYSICS, v.101, no.7, 2007-04

54
Strain effects in lattice-mismatched InxGa1-xAs/InyAl1-yAs coupled double quantum wells

Kim, TW; Jung, M; Lee, DU; Lim, YS; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.73, no.1, pp.61 - 63, 1998-07

55
Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

Cho, HK; Lee, JeongYong; Leem, JY, APPLIED SURFACE SCIENCE, v.221, pp.288 - 292, 2004-01

56
Strong luminescence of two-dimensional electron gas in tensile-stressed AlGaN/GaN heterostructures grown on Si substrates

Kim, Ki-Won; Kim, Dong-Seok; Im, Ki-Sik; Lee, Jung-Hee; Kwon, Bong-Joon; Kwack, Ho-Sang; Beck, Seol; et al, APPLIED PHYSICS LETTERS, v.98, no.14, 2011-04

57
Superlattice formation of (Ba,Sr)TiO3 prepared by metal-organic chemical vapor deposition

Yoo, DC; Lee, JeongYong, MATERIALS LETTERS, v.47, no.4-5, pp.258 - 261, 2001-02

58
Superlattice-like stacking fault and phase separation of InxGa1-xN grown on sapphire substrate by metalorganic chemical vapor deposition

Cho, HK; Lee, JeongYong; Kim, KS; Yang, GM, APPLIED PHYSICS LETTERS, v.77, no.2, pp.247 - 249, 2000-07

59
Surface morphology and domain structure during the evolution of ZnO nanorods into films

Park, Dong Jun; Lee, JeongYong; Kim, Dong Chan; Cho, Hyung Koun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.3, 2009-02

60
SURFACE-ROUGHNESS AND DEFECT MORPHOLOGY IN ELECTRON-CYCLOTRON-RESONANCE HYDROGEN PLASMA CLEANED (100)SILICON AT LOW-TEMPERATURES

HWANG, KH; YOON, E; WHANG, KW; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.67, no.24, pp.3590 - 3592, 1995-12

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