Browse by Subject SiGe
Showing results 1 to 12 of 12
| A 60-GHz variable gain amplifier with low phase and OP1dB variation Byeon, Chul Woo; Park, Chul Soon, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.62, no.2, pp.696 - 700, 2020-02 |
| A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure Lim, YS; Jeong, JS; Lee, JeongYong; Kim, HS; Shon, HK; Kim, HK; Moon, DW, JOURNAL OF ELECTRONIC MATERIALS, v.31, no.5, pp.529 - 534, 2002-05 |
| Analysis for linearization and efficiency enhancement of RF power amplifier ICs for mobile handset = 모바일 핸드셋용 초고주파 전력증폭기 집적회로의 효율 개선과 선형화기 분석link Kim, Ji-Hoon; 김지훈; et al, 한국정보통신대학교, 2008 |
| Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier Mheen, B; Song, YJ; Kang, JY; Shim, KH; Hong, Songcheol, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.7, no.4-6, pp.375 - 378, 2004-08 |
| Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers Rieh, JS; Klotzkin, D; Qasaimeh, Q; Lu, LH; Yang, Kyounghoon; Katehi, LPB; Bhattacharya, P; et al, IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.3, pp.415 - 417, 1998-03 |
| SiGe HBT 소자 소신호 모델링과 RF Transmitter단 설계 = SiGe HBT small signal modeling and design of RF transmitter partlink 윤명훈; Yoon, Myung-Hoon; et al, 한국과학기술원, 2000 |
| Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology Rieh, JS; Qasaimeh, O; Lu, LH; Yang, Kyounghoon; Katehi, LPB; Bhattacharya, P; Croke, ET, IEEE MICROWAVE AND GUIDED WAVE LETTERS, v.8, no.2, pp.63 - 65, 1998-02 |
| Strain effects on the thermal stability of SiGe/Si heterostructures = SiGe/Si 이종접합구조의 열적 안정성에 대한 변형량 효과 연구link Lim, Young-Soo; 임영수; et al, 한국과학기술원, 2001 |
| Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 |
| Strained-SiGe complementary MOSFETs adopting different thicknesses of silicon cap layers for low power and high performance applications Mheen, B; Song, YJ; Kang, JY; Hong, Songcheol, ETRI JOURNAL, v.27, no.4, pp.439 - 445, 2005-08 |
| Study of quasi-two-dimensional hole gas in Si/SixGe1-x/Si quantum wells Cheon, SH; Lee, SC; Hong, Songcheol; Yoo, KH, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.2B, pp.849 - 852, 1996-02 |
| Ultrathin-body SOI MOSFET for deep-sub-tenth micron era Choi, Yang-Kyu; Asano, K; Lindert, N; Subramanian, V; King, TJ; Bokor, J; Hu, CM, IEEE ELECTRON DEVICE LETTERS, v.21, no.5, pp.254 - 255, 2000-05 |
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