Showing results 1 to 5 of 5
A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure Cho, T; Kim, JW; Oh, JE; Choe, JW; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.38, no.4B, pp.2442 - 2444, 1999-04 |
Comparison of quantum nature in InAs/GaAs quantum dots Jang Y.D.; Lee U.H.; Lee H.; Lee D.; Kim J.S.; Leem J.Y.; Noh S.K., JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S111 - S113, 2003 |
Quantum Simulation Study on Performance Optimization of GaSb/InAs nanowire Tunneling FET Hur, Ji-Hyun; Jeon, Sanghun, JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.5, pp.630 - 634, 2016-10 |
Strucrural properties of GaSb layers grown on InAs, AlSb, and GaSb buffer layers on GaAs (001) substrates Noh, YK; Hwang, YJ; Kim, MD; Kwon, YJ; Oh, JE; Kim, Y.H; Lee, JeongYong, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1929 - 1932, 2007-06 |
Study of InAs quantum dot memory device = InAs 양자점을 이용한 메모리 소자 연구link Son, Hee-Soo; 손희수; et al, 한국과학기술원, 2001 |
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