Showing results 1 to 3 of 3
Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications Seo, Junbeom; Lee, Jaehyun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.4, pp.1793 - 1798, 2017-04 |
High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure Lee, Jung-Woo; Han, Joon-Kyu; Wang, Dong-Hyun; Yun, Seong-Yun; Oh, Jeong-Seob; Bang, Byeong-Chan; Cha, Won-Hyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.4, pp.2801 - 2804, 2024-04 |
Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K Jeong, Jaeyong; Kim, Jongmin; Lee, Jisung; Suh, Yoonje; Rheem, Nahyun; Kim, Seongkwang; Park, Juhyuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3390 - 3395, 2024-05 |
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