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Characterization of Ge-Sb-Te based film by MOCVD for phase change memory application = 상변화 메모리 소자 응용을 위한 MOCVD를 이용한 Ge-Sb-Te계 박막의 증착 및 특성분석link Kim, Ran-Young; 김난영; et al, 한국과학기술원, 2008 |
Growth of Ge-doped Sb2Te3 thin films by metal-organic chemical vapor deposition Kim, Ran-Young; Kim, Ho Gi; Yoon, Soon-Gil, INTEGRATED FERROELECTRICS, v.90, pp.80 - 87, 2007-04 |
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