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Defect-free ultra-shallow source/drain extension using spin-on-dopants for deep submicron SOI MOSFET applications Yang, JH; Oh, Jihun; Cho, WJ; Lee, SJ; Im, KJ; Park, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.44, no.2, pp.423 - 426, 2004-02 |
Fabrication and process simulation of SOI MOSFETs with a 30-nm gate length Cho, WJ; Yang, JH; Im, K; Oh, Jihun; Lee, S; Parr, K, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.43, no.5, pp.892 - 897, 2003-11 |
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