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사진
Jeon, Sanghun (전상훈)
교수, (전기및전자공학부)
Research Area
Semiconductor Process, Semiconductor Materials, Semiconductor Sensor
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Three-terminal vertical ferroelectric synaptic barristor enabled by HZO/ graphene heterostructure with rebound depolarization

    Jang, Seonghoon; Kim, Yongjun; Jeon, Jihoon; et al, JOURNAL OF ALLOYS AND COMPOUNDS, v.965, 2023-11

    2
    Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications

    Joh, Hongrae; Nam, Sooji; Jung, Minhyun; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.44, pp.51339 - 51349, 2023-10

    3
    Design consideration of ferroelectric field-effect-transistors with metal-ferroelectric-metal capacitor for ternary content addressable memory

    Yi, Boram; Hwang, Junghyeon; Oh, Tae Woo; et al, SOLID-STATE ELECTRONICS, v.206, 2023-08

    4
    High Pressure Microwave Annealing Effect on Electrical Properties of Hf (x) Zr1-x O Films near Morphotropic Phase Boundary

    Jung, Minhyun; Kim, Chaeheon; Hwang, Junghyeon; et al, ACS APPLIED ELECTRONIC MATERIALS, v.5, no.9, pp.4826 - 4835, 2023-08

    5
    Dual-Mode Operations of Self-Rectifying Ferroelectric Tunnel Junction Crosspoint Array for High-Density Integration of IoT Devices

    Lim, Sehee; Goh, Youngin; Lee, Young Kyu; et al, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.58, no.7, pp.1860 - 1870, 2023-07

    6
    Enhancement of electrical properties of a-IGZO thin film transistor by low temperature (150 degrees C) microwave annealing for flexible electronics

    Jung, Taeseung; Han, Jung Hoon; Nam, Sooji; et al, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.41, no.3, 2023-05

    7
    The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications

    Kim, Taeho; Kim, Giuk; Lee, Young Kyu; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02

    8
    Effect of Floating Gate Insertion on the Analog States of Ferroelectric Field-Effect Transistors

    Lee, Sangho; Lee, Youngkyu; Kim, Giuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.349 - 353, 2023-01

    9
    Oxygen Vacancy Control as a Strategy to Enhance Imprinting Effect in Hafnia Ferroelectric Devices

    Jeong, Yeongseok; Gaddam, Venkateswarlu; Goh, Youngin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.1, pp.354 - 359, 2023-01

    10
    A method of controlling the imprint effect in hafnia ferroelectric device

    Shin, Hunbeom; Gaddam, Venkateswarlu; Goh, Youngin; et al, APPLIED PHYSICS LETTERS, v.122, no.2, 2023-01

    11
    Power-Delay Area-Efficient Processing-In-Memory Based on Nanocrystalline Hafnia Ferroelectric Field-Effect Transistors

    Kim, Giuk; Ko, Dong Han; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.15, no.1, pp.1463 - 1474, 2023-01

    12
    Steep-Slope Transistor with an Imprinted Antiferroelectric Film

    Lee, Sangho; Lee, Yongsun; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.47, pp.53019 - 53026, 2022-11

    13
    A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology

    Jung, Minhyun; Gaddam, Venkateswarlu; Jeon, Sanghun, NANO CONVERGENCE, v.9, no.1, pp.1 - 18, 2022-10

    14
    Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory

    Lee, Sangho; Kim, Giuk; Kim, Taeho; et al, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10

    15
    Novel Approach to High kappa (similar to 59) and Low EOT (similar to 3.8 angstrom) near the Morphotrophic Phase Boundary with AFE/FE (ZrO2/HZO) Bilayer Heterostructures and High-Pressure Annealing

    Gaddam, Venkateswarlu; Kim, Giuk; Kim, Taeho; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.38, pp.43463 - 43473, 2022-09

    16
    High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

    Kim, Giuk; Lee, Sangho; Eom, Taehyong; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.26, pp.9802 - 9812, 2022-07

    17
    Effects of iCVD organic passivation in oxide thin-film transistors under repetitive bending stress for electrical and mechanical stability

    Jung, Taeseung; Jeon, Sanghun, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.40, no.4, 2022-07

    18
    Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology

    Hwang, Junghyeon; Lim, Sehee; Kim, Giuk; et al, IEEE ELECTRON DEVICE LETTERS, v.43, no.7, pp.1049 - 1052, 2022-07

    19
    Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process

    Hwang, Junghyeon; Kim, Minki; Jung, Minhyun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.6, pp.3439 - 3445, 2022-06

    20
    Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave Annealing

    Joh, Hongrae; Jung, Minhyun; Hwang, Junghyeon; et al, ACS APPLIED MATERIALS & INTERFACES, v.14, no.1, pp.1326 - 1333, 2022-01

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