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Ahn, SungTae (안성태)
교수, K-School(K-School)
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    A simple model to estimate the impact force induced by piston slap

    Cho, SH; Ahn, SungTaeresearcher; Kim, Yang-Hannresearcher, JOURNAL OF SOUND AND VIBRATION, v.255, no.2, pp.229 - 242, 2002-08

    2
    A reverberation model based on objective parameters of subjective perception

    Kim, Yang-Hannresearcher; Ahn, SungTaeresearcher, JOURNAL OF THE AUDIO ENGINEERING SOCIETY, v.49, no.9, pp.786 - 794, 2001-09

    3
    Electrical properties of PZT thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

    Kim, ST; Kim, JW; Jung, SW; et al, MATERIALS CHEMISTRY AND PHYSICS, v.45, no.2, pp.155 - 158, 1996-08

    4
    EFFECTS OF ANNEALING IN O-2 AND N-2 ON THE ELECTRICAL-PROPERTIES OF TANTALUM OXIDE THIN-FILMS PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

    Kim, IL; Kim, Jong-Seok; Kwon, Oh-Seung; et al, JOURNAL OF ELECTRONIC MATERIALS, v.24, no.10, pp.1435 - 1441, 1995-10

    5
    DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION

    HWANG, CS; PARK, SO; KANG, CS; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.34, no.9B , pp.5178 - 5183, 1995-09

    6
    AL-REFLOW PROCESS WITH A CAP-CLAMP FOR SUBMICRON CONTACT HOLES

    CHOI, GH; LEE, SI; PARK, CS; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.34, no.2B, pp.1026 - 1029, 1995-02

    7
    MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF TANTALUM OXIDE THIN-FILM PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

    KIM, I; AHN, SD; CHO, BW; et al, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.33, no.12A, pp.6691 - 6698, 1994-12

    8
    A NOVEL LOCAL OXIDATION OF SILICON (LOCOS)-TYPE ISOLATION TECHNOLOGY FREE OF THE FIELD OXIDE THINNING EFFECT

    PARK, TS; AHN, SJ; AHN, STresearcher, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.435 - 439, 1994-01

    9
    EFFECT OF THE SILICIDATION REACTION CONDITION ON THE GATE OXIDE INTEGRITY IN TI-POLYCIDE GATE

    LEE, NI; KIM, YW; AHN, STresearcher, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.33, no.1B, pp.672 - 677, 1994-01

    10
    FORMATION OF THE AMORPHOUS PHASE IN ZR2AL BY HYDROGEN ABSORPTION AND THE EFFECTS OF TITANIUM SUBSTITUTION ON THE AMORPHIZATION BEHAVIOR

    Ahn, SungTaeresearcher; KIM, YG; Lee, Jai Young, JOURNAL OF ALLOYS AND COMPOUNDS, v.186, no.1, pp.45 - 52, 1992-07

    11
    REDUCTION OF LATERAL PHOSPHORUS DIFFUSION IN CMOS NORMAL-WELLS

    Ahn, SungTaeresearcher; KENNEL, HW; PLUMMER, JD; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.37, no.3, pp.806 - 807, 1990-03

    12
    VACANCY SUPERSATURATION IN SI UNDER SIO2 CAUSED BY SIO FORMATION DURING ANNEALING IN AR

    AHN, STresearcher; KENNEL, HW; TILLER, WA; et al, JOURNAL OF APPLIED PHYSICS, v.65, no.8, pp.2957 - 2963, 1989-04

    13
    FILM STRESS-RELATED VACANCY SUPERSATURATION IN SILICON UNDER LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE FILMS

    Ahn, SungTaeresearcher; KENNEL, HW; PLUMMER, JD; et al, JOURNAL OF APPLIED PHYSICS, v.64, no.10, pp.4914 - 4919, 1988-11

    14
    ENHANCED SB DIFFUSION IN SI UNDER THERMAL SI3N4 FILMS DURING ANNEALING IN AR

    Ahn, SungTaeresearcher; KENNEL, HW; PLUMMER, JD; et al, APPLIED PHYSICS LETTERS, v.53, no.17, pp.1593 - 1595, 1988-10

    15
    A STAINING TECHNIQUE FOR THE STUDY OF TWO-DIMENSIONAL DOPANT DIFFUSION IN SILICON

    Ahn, SungTaeresearcher; TILLER, WA, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.135, no.9, pp.2370 - 2373, 1988-09

    16
    EFFECT OF OXYGEN PRECIPITATION ON PHOSPHORUS DIFFUSION IN CZOCHRALSKI SILICON

    AHN, STresearcher; KENNEL, HW; PLUMMER, JD; et al, APPLIED PHYSICS LETTERS, v.53, no.1, pp.34 - 36, 1988-07

    17
    A STUDY OF SILICON INTERSTITIAL KINETICS USING SILICON MEMBRANES - APPLICATIONS TO 2D DOPANT DIFFUSION

    Ahn, SungTaeresearcher; GRIFFIN, PB; SHOTT, JD; et al, JOURNAL OF APPLIED PHYSICS, v.62, no.12, pp.4745 - 4755, 1987-12

    18
    MODEL FOR BULK EFFECTS ON SI INTERSTITIAL DIFFUSIVITY IN SILICON

    GRIFFIN, PB; AHN, STresearcher; TILLER, WA; et al, APPLIED PHYSICS LETTERS, v.51, no.2, pp.115 - 117, 1987-07

    19
    CHEMICALLY-INDUCED MIGRATION OF LIQUID-FILM IN W-NI-FE ALLOY

    SONG, YD; Ahn, SungTaeresearcher; Yoon, Duk Yong, ACTA METALLURGICA, v.33, no.10, pp.1907 - 1910, 1985

    20
    INTERCEPT LENGTH DISTRIBUTION OF RECTANGULAR PRISMS

    Ahn, SungTaeresearcher; Yoon, Young-Ku, SCRIPTA METALLURGICA, v.16, no.12, pp.1347 - 1352, 1982

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