Researcher Page

사진

Choi, Sung-Yool (최성율) B-3383-2012 7408120246 sungyool.choi@kaist.ac.kr 0000-0002-0960-7146

Department
School of Electrical Engineering(전기및전자공학부)
Website
http://mndl.kaist.ac.krHomePage
Research Area
Graphene, 2D materials, Nanoelectronic Devices, Flexible electronics, Display

Keyword Cloud

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1

Sonochemical synthesis of HKUST-1-based CuO decorated with Pt nanoparticles for formaldehyde gas-sensor applications

Lee, Jae Eun; Kim, Do Yeob; Lee, Hyung-Kun; et al, SENSORS AND ACTUATORS B-CHEMICAL, v.292, pp.289 - 296, 2019-08

2

Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications

Bae, Hagyoul; Kim, Daewon; Seo, Myungsoo; et al, ADVANCED MATERIALS TECHNOLOGIES, v.4, no.8, 2019-08

3

Large-Scale, Low-Power Nonvolatile Memory Based on Few-Layer MoS2 and Ultrathin Polymer Dielectrics

Yang, Sang Cheol; Choi, Junhwan; Jang, Byung Chul; et al, ADVANCED ELECTRONIC MATERIALS, v.5, no.5, pp.1800688, 2019-05

4

Chemically exfoliated 1T-phase transition metal dichalcogenide nanosheets for transparent antibacterial applications

Kim, Tae In; Kim, Jaeyoung; Park, Ick Joon; et al, 2D MATERIALS, v.6, no.2, pp.025025, 2019-04

5

Nonvolatile Memories Based on Graphene and Related 2D Materials

Bertolazzi, Simone; Bondavalli, Paolo; Roche, Stephan; et al, ADVANCED MATERIALS, v.31, no.10, pp.1806663, 2019-03

6

Polymer Analog Memristive Synapse with Atomic-Scale Conductive Filament for Flexible Neuromorphic Computing System

Jang, Byung Chul; Kim, Seong-Gyu; Yang, SangYoon; et al, NANO LETTERS, v.19, no.2, pp.839 - 849, 2019-02

7

Observation of Wavelength-Dependent Quantum Plasmon Tunneling with Varying the Thickness of Graphene Spacer

Lee, Khang June; Kim, Shinho; Hong, Woonggi; et al, SCIENTIFIC REPORTS, v.9, pp.1199, 2019-02

8

Improved Electrical Contact Properties of MoS2-Graphene Lateral Heterostructure

Hong, Woonggi; Shim, Gi Woong; Yang, SangYoon; et al, ADVANCED FUNCTIONAL MATERIALS, v.29, no.6, pp.1807550, 2019-02

9

Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power

Shin, Gwang Hyuk; Park, Jung Hoon; Lee, Khang June; et al, ACS APPLIED MATERIALS & INTERFACES, v.11, no.7, pp.7626 - 7634, 2019-01

10

A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor

Hur, Jae; Jang, Byung Chul; Park, Jihun; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.47, 2018-11

11

Large-Area CVD-Grown MoS2 Driver Circuit Array for Flexible Organic Light-Emitting Diode Display

Woo, Youngjun; Hong, Woonggi; Yang, SangYoon; et al, Advanced Electronic Materials, v.4, no.11, pp.1800251, 2018-11

12

Vertical-Tunnel Field-Effect Transistor Based on a Silicon–MoS2 Three-Dimensional–Two-Dimensional Heterostructure

Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; et al, ACS APPLIED MATERIALS & INTERFACES, v.10, no.46, pp.40212 - 40218, 2018-11

13

Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D-2D heterojunction

Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.47, pp.475101, 2018-10

14

Stretchable thin-film transistors with molybdenum disulfide channels and graphene electrodes

Park, Ick Joon; Kim, Tae In; Kang, Sumin; et al, NANOSCALE, v.10, no.34, pp.16069 - 16078, 2018-09

15

First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

Seo, Myungsoo; Kang, Min Ho; Jeon, Seung-Bae; et al, IEEE ELECTRON DEVICE LETTERS, v.39, no.9, pp.1445 - 1448, 2018-09

16

Atomic-scale etching of hexagonal boron nitride for device integration based on two-dimensional materials

Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; et al, NANOSCALE, v.10, no.32, pp.15205 - 15212, 2018-08

17

Pyridinic-N-Doped Graphene Paper from Perforated Graphene Oxide for Efficient Oxygen Reduction

Bang, Gyeong Sook; Shim, Gi Woong; Shin, Gwang Hyuk; et al, ACS OMEGA, v.3, no.5, pp.5522 - 5530, 2018-05

18

High‐Performance MoS2 Thin‐Film Transistors for Flexible OLED display

Woo, Youngjun; Hong, Woonggi; Yang, SangYoon; et al, SOCIETY FOR INFORMATION DISPLAY, v.49, no.1, pp.797 - 799, 2018-05

19

Flexible and Transparent Graphene Electrode Architecture with Selective Defect Decoration for Organic Light-Emitting Diodes

Park, Ick Joon; Kim, Tae In; Yoon, Taeshik; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.10, 2018-03

20

Memristive Logic-in-Memory Integrated Circuits for Energy-Efficient Flexible Electronics

Jang, Byung Chul; Nam, Yunyong; Koo, Beom Jun; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.2, pp.1704725, 2018-01

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