The trend of electron temperature and electron density in the process of microcrystalline silicon solar cells

Abstract

We measured the trend of the electron temperature in the SiH(4)/H(2) plasma by monitoring the optical emission intensity ratio between Si((sic)) (288 nm) and SiH((sic)) (414 nm) and estimated the averaged electron density through plasma impedance measurement with a current-voltage monitor (ENI INC, V-I probe) The plasma was generated between parallel plates by using VHF (40 68 MHz) power for Plasma Enhanced Chemical Vapor Deposition (PECVD) For various pressures and input powers. we analyzed the relation between the plasma parameters and the characteristics of the H(2)-diluted silane plasma From the analysis. the optimization of the mu c-Si H CVD piocess was suggested Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved