Improved oxidation resistance of Ru/Si capping layer for extreme ultraviolet lithography reflector

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The authors report on the chemical durability and oxidation resistance of Ru/Si, Ru/B, Ru/C, and Ru capping layers on the extreme ultraviolet (EUV) reflector surface. Surface etching and changes in the oxidation state were probed with x-ray photoelectron spectroscopy. The changes in surface morphology and roughness are characterized using scanning electron microscopy and atomic force microscopy. Out of four different capping layers, Ru/Si layers exhibited the least surface oxidation after oxygen plasma and UV/ozone treatment, indicating a superior oxidation resistance. The authors found that the reflectivity of the Ru/Si capped reflector is similar to that of a bare Ru capped reflector. This study suggests that a Ru/Si layer can be an excellent capping layer for the EUV reflector. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3596560]
Publisher
A V S AMER INST PHYSICS
Issue Date
2011-07
Language
English
Article Type
Article
Keywords

MASK BLANKS; RU FILMS; OZONE; RUTHENIUM; REMOVAL; SURFACE; NANOPARTICLES; REDUCTION; OPTICS; PLASMA

Citation

JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.29, no.4

ISSN
1071-1023
URI
http://hdl.handle.net/10203/97483
Appears in Collection
EEW-Journal Papers(저널논문)
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