Influence of oxygen partial pressure on the epitaxial MgFe2O4 thin films deposited on SrTiO3 (100) substrate

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Epitaxial MgFe2O4 (MFO) thin films have been deposited on SrTiO3 (STO) (1 0 0) substrates via a pulsed laser deposition technique under different oxygen partial pressures at 650 degrees C. The various oxygen partial pressures showed significant influence on the sticking coefficient and the spatial distribution of target materials. The lattice constant of the MFO thin films was decreased with increasing an oxygen partial pressure. The thin films synthesized at high oxygen partial pressure showed rough surface morphology. Also, epitaxial MFO thin films showed anisotropic magnetic behavior and the film grown at the oxygen pressure of 40 mTorr exhibited the highest saturation magnetization of 194 emu/cc. (C) 2010 Elsevier B.V. All rights reserved.
Publisher
ELSEVIER SCIENCE SA
Issue Date
2010-08
Language
English
Article Type
Article
Keywords

PULSED-LASER DEPOSITION; AMBIENT GAS; ZNO FILMS; ABLATION; GROWTH

Citation

JOURNAL OF ALLOYS AND COMPOUNDS, v.503, no.2, pp.460 - 463

ISSN
0925-8388
DOI
10.1016/j.jallcom.2010.05.033
URI
http://hdl.handle.net/10203/97066
Appears in Collection
MS-Journal Papers(저널논문)
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