Magnetic and Electronic Properties of a Mn Delta-doping GaN Layer

Abstract

The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization of the Mn delta-doped (Ga(0.995)Mn(0.005))N thin films was significantly enhanced in comparison with that of the conventionally-doped (Ga(0.995)Mn(0.005))N thin films. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga(0.995)Mn(0.005))N thin films was above room temperature. The theoretical electronic results showed that Ga vacancies near the Mn delta-dopilig layer were likely to cause p-type conductance, indicative of an enhancement of the magnetic properties in (Ga(1-x)Mn(x))N thin films.