Effects of Sol-Gel Organic-Inorganic Hybrid Passivation on Stability of Solution-Processed Zinc Tin Oxide Thin Film Transistors
We fabricated solution-processed zinc tin oxide (ZTO) TFTs with sol-gel organic-inorganic hybrid passivation layers owing to their solution-processibility and good water and oxygen barrier property. The sol-gel organic-inorganic hybrid passivation layers reduce hysteresis of the TFTs without deterioration of performance. The gate bias stability and the environmental stability under high temperature and relative humidity are also improved compared to unpassivated and poly(methyl methacrylate) (PMMA) passivated TFTs. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3603845] All rights reserved.
- Publisher
- ELECTROCHEMICAL SOC INC
- Issue Date
- 2011
- Language
- English
- Article Type
- Article
- Keywords
FABRICATION
- Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.14, no.9, pp.375 - 379
- ISSN
- 1099-0062
- Appears in Collection
- MS-Journal Papers(저널논문)
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