Micromachined bridge-shaped spiral inductor on anodised aluminium substrate

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Noble micromachined integrated spiral inductors on anodised aluminium substrate are presented. The RF characteristics of the fabricated inductors have been measured. A high peak Q-factor of 82.36 at 4.2 GHz has been achieved with inductance of 2.59 nH (at 2 GHz) and a self-resonant frequency of around 10 GHz. This work demonstrates that an integrated passive device on anodised aluminium substrate has a competitive RF performance compared to that of LTCC technology.
Publisher
Inst Engineering Technology-Iet
Issue Date
2009-03
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.45, no.6, pp.311 - 313

ISSN
0013-5194
DOI
10.1049/el.2009.3744
URI
http://hdl.handle.net/10203/94722
Appears in Collection
EE-Journal Papers(저널논문)
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