Three-dimensional interconnect for multilayer module packages with selectively anodised aluminium substrate

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dc.contributor.authorYeo, S. K.ko
dc.contributor.authorKwon, Young Seko
dc.date.accessioned2013-03-08T18:02:40Z-
dc.date.available2013-03-08T18:02:40Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-06-
dc.identifier.citationELECTRONICS LETTERS, v.45, no.13, pp.678 - 680-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/93836-
dc.description.abstractIt is reported that 3-D interconnects fabricated with a selectively anodised aluminium process for a multilayer module package can be used to evaluate high-frequency performance. The proposed method of fabricating vertical interconnects is easier and more cost-effective than other RF MEMS processes. To transfer RF signals vertically, coaxial hermetic seal vias with characteristic 50 V impedances and embedded anodised aluminium vias with a solder ball attachment and flip-chip bonding were used. The optimised interconnect structure demonstrated RF characteristics with an insertion loss of less than 1.55 dB and a return loss of less than 12.25 dB over a broad bandwidth ranging from 0.1 to 10 GHz. Experimental results suggest that the developed technology, which is based on selectively anodised aluminium, can be applied to new 3-D packaging solutions.-
dc.languageEnglish-
dc.publisherInst Engineering Technology-Iet-
dc.subjectTECHNOLOGY-
dc.titleThree-dimensional interconnect for multilayer module packages with selectively anodised aluminium substrate-
dc.typeArticle-
dc.identifier.wosid000267820600014-
dc.identifier.scopusid2-s2.0-67650075158-
dc.type.rimsART-
dc.citation.volume45-
dc.citation.issue13-
dc.citation.beginningpage678-
dc.citation.endingpage680-
dc.citation.publicationnameELECTRONICS LETTERS-
dc.identifier.doi10.1049/el.2009.3588-
dc.contributor.localauthorKwon, Young Se-
dc.contributor.nonIdAuthorYeo, S. K.-
dc.type.journalArticleArticle-
dc.subject.keywordPlusTECHNOLOGY-
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EE-Journal Papers(저널논문)
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