Effect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/poly(3-hexylthiophene)/Al device

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dc.contributor.authorLee, Yeon-Ilko
dc.contributor.authorYoun, Jun-Hoko
dc.contributor.authorRyu, Mi-Sunko
dc.contributor.authorKim, Jung-Hoko
dc.contributor.authorJang, Jinko
dc.contributor.authorMoon, Hie-Taeko
dc.date.accessioned2013-03-08T17:08:15Z-
dc.date.available2013-03-08T17:08:15Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-09-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.108, no.5-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/93684-
dc.description.abstractWe have studied the modification of electrical properties in poly(3-hexylthiophene) (P3HT) thin film by means of illumination and annealing. The hole mobility of P3HT was monitored by impedance spectroscopy and the density of localized states in the band gap near the Fermi level was calculated using the step-by-step method based on the space-charge-limited-current model. With the illumination, we found that the bulk trap density increased from 2.51 to 2.85 x 10(16) cm(-3) eV(-1) and the hole mobility of P3HT decreased from 1.88 x 10(-4) cm(2) s(-1) to 4.22 x 10(-5) cm(2) V(-1) s(-1). With the annealing at 70 degrees C for 30 min, it is found that the mobility then partially recovers to 1.18 X 10(-4) cm(2) V s(-1). (c) 2010 American Institute of Physics. [doi:10.1063/1.3475645]-
dc.languageEnglish-
dc.publisherAMER INST PHYSICS-
dc.subjectCHARGE-LIMITED CURRENT-
dc.subjectFIELD-EFFECT TRANSISTORS-
dc.subjectCARRIER MOBILITY-
dc.subjectIMPEDANCE SPECTROSCOPY-
dc.subjectPOLYMER-
dc.subjectPOLY(3-HEXYLTHIOPHENE)-
dc.subjectHETEROJUNCTIONS-
dc.subjectSENSORS-
dc.subjectCELLS-
dc.titleEffect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/poly(3-hexylthiophene)/Al device-
dc.typeArticle-
dc.identifier.wosid000282478900105-
dc.identifier.scopusid2-s2.0-77956862926-
dc.type.rimsART-
dc.citation.volume108-
dc.citation.issue5-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.identifier.doi10.1063/1.3475645-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorMoon, Hie-Tae-
dc.contributor.nonIdAuthorRyu, Mi-Sun-
dc.contributor.nonIdAuthorKim, Jung-Ho-
dc.contributor.nonIdAuthorJang, Jin-
dc.type.journalArticleArticle-
dc.subject.keywordPlusCHARGE-LIMITED CURRENT-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusCARRIER MOBILITY-
dc.subject.keywordPlusIMPEDANCE SPECTROSCOPY-
dc.subject.keywordPlusPOLYMER-
dc.subject.keywordPlusPOLY(3-HEXYLTHIOPHENE)-
dc.subject.keywordPlusHETEROJUNCTIONS-
dc.subject.keywordPlusSENSORS-
dc.subject.keywordPlusCELLS-
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