Effect of illumination and annealing on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate)/poly(3-hexylthiophene)/Al device

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We have studied the modification of electrical properties in poly(3-hexylthiophene) (P3HT) thin film by means of illumination and annealing. The hole mobility of P3HT was monitored by impedance spectroscopy and the density of localized states in the band gap near the Fermi level was calculated using the step-by-step method based on the space-charge-limited-current model. With the illumination, we found that the bulk trap density increased from 2.51 to 2.85 x 10(16) cm(-3) eV(-1) and the hole mobility of P3HT decreased from 1.88 x 10(-4) cm(2) s(-1) to 4.22 x 10(-5) cm(2) V(-1) s(-1). With the annealing at 70 degrees C for 30 min, it is found that the mobility then partially recovers to 1.18 X 10(-4) cm(2) V s(-1). (c) 2010 American Institute of Physics. [doi:10.1063/1.3475645]
Publisher
AMER INST PHYSICS
Issue Date
2010-09
Language
English
Article Type
Article
Keywords

CHARGE-LIMITED CURRENT; FIELD-EFFECT TRANSISTORS; CARRIER MOBILITY; IMPEDANCE SPECTROSCOPY; POLYMER; POLY(3-HEXYLTHIOPHENE); HETEROJUNCTIONS; SENSORS; CELLS

Citation

JOURNAL OF APPLIED PHYSICS, v.108, no.5

ISSN
0021-8979
DOI
10.1063/1.3475645
URI
http://hdl.handle.net/10203/93684
Appears in Collection
PH-Journal Papers(저널논문)
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