Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

Cited 37 time in webofscience Cited 0 time in scopus
  • Hit : 169
  • Download : 0
We perform quasiparticle energy calculations to study the charge-transition levels of oxygen vacancy (V-O) in HfO2. The negative-U property of V-O can explain flat band voltage shifts and threshold voltage (V-th) instability in hafnium based devices. In p(+) Si gate electrode, the Fermi level pinning varies by up to 0.55 eV, in good agreement with the measured values. Depending on gate bias, V-O traps electrons or holes from the Si channel, causing the V-th instability. It is suggested that short time-scale charge trapping/detrapping is due to metastable V-O(-1) centers, whereas stable V-O(-2) centers dominate long time-scale instability.
Publisher
AMER INST PHYSICS
Issue Date
2009-03
Language
English
Article Type
Article
Citation

APPLIED PHYSICS LETTERS, v.94, no.12, pp.122901 - 122901

ISSN
0003-6951
DOI
10.1063/1.3106643
URI
http://hdl.handle.net/10203/93629
Appears in Collection
PH-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 37 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0