The authors describe a nondestructive measurement method that enables them to obtain the cross-sectional thickness profile of thin-film layers fast with a single operation of measurement. The method is based on spectrally resolved white-light interferometry, being capable of reconstructing the tomographic height map of thin films with depth resolutions in the nanometer range. In terms of the measuring speed and resolution, the proposed method is well suited for the in-line high-speed inspection of microelectronics devices produced in large quantities particularly in the semiconductors and flat panel displays industries. (c) 2007 American Institute of Physics.