DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zang, H. | ko |
dc.contributor.author | Lee, S. J. | ko |
dc.contributor.author | Loh, W. Y. | ko |
dc.contributor.author | Wang, J. | ko |
dc.contributor.author | Chua, K. T. | ko |
dc.contributor.author | Yu, M. B. | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Lo, G. Q. | ko |
dc.contributor.author | Kwong, D. -L. | ko |
dc.date.accessioned | 2013-03-07T12:06:34Z | - |
dc.date.available | 2013-03-07T12:06:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-02 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.29, no.2, pp.161 - 164 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/90135 | - |
dc.description.abstract | We demonstrate, for the first time, the application of dopant-segregation (DS) technique in metal-germanium-metal photodetectors for dark-current suppression and high-speed performance. Low defect density and surface smooth epi-Ge (similar to 300 nm) layer was selectively grown on patterned Si substrate using two-step epi-growth at 400 degrees C/600 degrees C combined with a thin (similar to 10 nm) low-temperature Si/Si0.8Ge0.2 buffer layer. NiGe with DS effectively modulates the Schottky barrier height and suppresses dark current to similar to 10(-7) A at -1 V bias (width/spacing: 30/2.5 mu m). Under normal incidence illumination at 1.55 mu m, the devices show photoresponsivity of 0.12 A/W. The 3 dB bandwidth under -1 V bias is up to 6 GHz. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | I-N PHOTODETECTORS | - |
dc.subject | SI SUBSTRATE | - |
dc.subject | GE | - |
dc.subject | LAYERS | - |
dc.title | Dark-current suppression in metal-germanium-metal photodetectors through dopant-segregation in NiGe - Schottky barrier | - |
dc.type | Article | - |
dc.identifier.wosid | 000252622800009 | - |
dc.identifier.scopusid | 2-s2.0-39549113172 | - |
dc.type.rims | ART | - |
dc.citation.volume | 29 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 161 | - |
dc.citation.endingpage | 164 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2007.914095 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Zang, H. | - |
dc.contributor.nonIdAuthor | Lee, S. J. | - |
dc.contributor.nonIdAuthor | Loh, W. Y. | - |
dc.contributor.nonIdAuthor | Wang, J. | - |
dc.contributor.nonIdAuthor | Chua, K. T. | - |
dc.contributor.nonIdAuthor | Yu, M. B. | - |
dc.contributor.nonIdAuthor | Lo, G. Q. | - |
dc.contributor.nonIdAuthor | Kwong, D. -L. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | dark current | - |
dc.subject.keywordAuthor | dopant segregation (DS) | - |
dc.subject.keywordAuthor | germanium optical communications | - |
dc.subject.keywordAuthor | photodetectors | - |
dc.subject.keywordAuthor | selective epitaxial | - |
dc.subject.keywordPlus | I-N PHOTODETECTORS | - |
dc.subject.keywordPlus | SI SUBSTRATE | - |
dc.subject.keywordPlus | GE | - |
dc.subject.keywordPlus | LAYERS | - |
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