Heterojunction bipolar phototransistor with monolithic integrated microlens

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In this paper, we present a monolithic integration of a microlens and an InP/InGaAs heterojunction bipolar phototransistor (HPT). Three types of HPTs were fabricated and their optical characteristics were investigated. The optical gain of the proposed HPT was improved 6-fold compared to the front type HPT. The,HPT with a back-side microlens showed 0.61 A/W de responsivity (PD mode) and that of an HPT without a lens showed 0.18 A/W (PD mode) at 1.55 mu m illumination. Quantum efficiency was increased by 34.8%. The fiber alignment tolerance has also been improved. The HPT with a lens showed a 40 mu m tolerance, while the HPT without. a lens exhibited a 22-mu m tolerance at 3 dB below the maximum values.
Publisher
INST PURE APPLIED PHYSICS
Issue Date
2006-08
Language
English
Article Type
Article
Keywords

OPTICAL-INJECTION LOCKING; HPT OSCILLATOR; INP; FABRICATION; FIBER

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.8A, pp.6285 - 6287

ISSN
0021-4922
DOI
10.1143/JJAP.45.6285
URI
http://hdl.handle.net/10203/90048
Appears in Collection
EE-Journal Papers(저널논문)
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