Aluminum packaging for light-emitting diode using selectively anodizing method

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By the development of a high-power light-emitting diode (LED) for solid state lighting, the demand for driving current has increased rapidly, thereby increasing power dissipation. The heat flux corresponding to power dissipation is mainly generated in the p - n junction of LED; thus, the effective removal of heat is the most important function of LED packaging for increasing the lifetime of a LED chip. In this study, we proposed an aluminum packaging for a high-power LED using selectively anodizing technology and simulated its heat dissipation characteristic. Our aluminum packaging structure is composed of a reflector and an electrical via in one aluminum body. The reflector was fabricated by isotropic chemical etching and the electrical via was formed by selectively anodizing in the same body. The heat generated from the LED chip was directly dissipated through the entire aluminum body. Our aluminum packaging platform can easily be expanded into an array and wafer-level package. Thus, it is suitable for high-efficiency and low-cost packaging.
Publisher
Japan Soc Applied Physics
Issue Date
2008-04
Language
English
Article Type
Article; Proceedings Paper
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.4, pp.2950 - 2953

ISSN
0021-4922
URI
http://hdl.handle.net/10203/89118
Appears in Collection
EE-Journal Papers(저널논문)
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