Direct comparison of optical characteristics of InGaN-based laser diode structures grown on pendeo epitaxial GaN and sapphire substrates

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Direct comparison of optical properties and carrier dynamics of InGaN multiple quantum well (MQW) laser diode structures grown on pendeo epitaxial (PE)-GaN and sapphire substrates is reported. A strong increase in quantum efficiency and a dramatic reduction in stimulated emission threshold are observed for InGaN MQWs on PE-GaN substrates as compared to MQWs on sapphire substrates. Based on temperature-dependent time-resolved optical analysis, the authors find that a significant increase in nonradiative lifetime due to suppressed dislocation density plays an important role in enhancing optical properties of InGaN MQWs grown on PE-GaN substrates, resulting in radiative-process dominant emission even at room temperature. (c) 2007 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2007-03
Language
English
Article Type
Article
Keywords

MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; EMISSION; DYNAMICS; DENSITY

Citation

APPLIED PHYSICS LETTERS, v.90, pp.178 - 182

ISSN
0003-6951
DOI
10.1063/1.2716313
URI
http://hdl.handle.net/10203/88719
Appears in Collection
PH-Journal Papers(저널논문)
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