Silicon nitride two-level-temperature passivation on InP/InGaAsP light-emitting diodes

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The use of silicon nitride with a two-level temperature technique is proposed for the passivation of InP-based devices. InGaAsP/InP light-emitting diodes (LEDs) were fabricated by this passivation technique. The reverse current was decreased by about two orders of magnitude, and light-current linearity at a low current was improved.
Publisher
Japan Soc Applied Physics
Issue Date
2006
Language
English
Article Type
Article
Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.45, no.11, pp.8648 - 8649

ISSN
0021-4922
DOI
10.1143/JJAP.45.8648
URI
http://hdl.handle.net/10203/87713
Appears in Collection
EE-Journal Papers(저널논문)
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