Silicon nitride two-level-temperature passivation on InP/InGaAsP light-emitting diodes

Abstract

The use of silicon nitride with a two-level temperature technique is proposed for the passivation of InP-based devices. InGaAsP/InP light-emitting diodes (LEDs) were fabricated by this passivation technique. The reverse current was decreased by about two orders of magnitude, and light-current linearity at a low current was improved.