DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee H.-K. | ko |
dc.contributor.author | Kim K.-J. | ko |
dc.contributor.author | Han J.-H. | ko |
dc.contributor.author | Kang T.-H. | ko |
dc.contributor.author | Chung J.W. | ko |
dc.contributor.author | Kim B. | ko |
dc.date.accessioned | 2013-03-06T09:36:39Z | - |
dc.date.available | 2013-03-06T09:36:39Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008 | - |
dc.identifier.citation | PHYSICAL REVIEW B, v.77, no.11 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10203/86580 | - |
dc.description.abstract | We have investigated adsorption of acetic acid on Si (100)-2x1 at room temperature using high-resolution photoemission spectroscopy and near edge x-ray adsorption fine structure (NEXAFS) measurements in the partial electron yield mode. At room temperature, an acetic-acid molecule is found to chemisorb on Si (100)-2x1 surface through the formation of the O-H dissociation structure. NEXAFS was conducted to characterize the adsorption geometry of acetic acid on Si (100). The pi* orbital of the C = O bond shows a good angle dependence in carbon K-edge NEXAFS spectra, and we estimate the adsorption angle between chemisorbed acetic acid of C = O bond and the Si (100) surface normal as similar to 41 degrees +/- 2 degrees using an analytical solution of NEXAFS intensity. | - |
dc.language | English | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.subject | HIGH-RESOLUTION PHOTOEMISSION | - |
dc.subject | PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject | ADSORPTION | - |
dc.subject | X-1 | - |
dc.subject | SURFACE | - |
dc.subject | ELECTRONICS | - |
dc.subject | SELECTIVITY | - |
dc.subject | MOLECULES | - |
dc.subject | CHEMISTRY | - |
dc.subject | BEAMLINE | - |
dc.title | Chemisorption of acetic acid on Si(100)-2x1 at room temperature | - |
dc.type | Article | - |
dc.identifier.wosid | 000254542800120 | - |
dc.identifier.scopusid | 2-s2.0-41449088399 | - |
dc.type.rims | ART | - |
dc.citation.volume | 77 | - |
dc.citation.issue | 11 | - |
dc.citation.publicationname | PHYSICAL REVIEW B | - |
dc.identifier.doi | 10.1103/PhysRevB.77.115324 | - |
dc.contributor.localauthor | Kim K.-J. | - |
dc.contributor.nonIdAuthor | Lee H.-K. | - |
dc.contributor.nonIdAuthor | Han J.-H. | - |
dc.contributor.nonIdAuthor | Kang T.-H. | - |
dc.contributor.nonIdAuthor | Chung J.W. | - |
dc.contributor.nonIdAuthor | Kim B. | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | HIGH-RESOLUTION PHOTOEMISSION | - |
dc.subject.keywordPlus | PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | ADSORPTION | - |
dc.subject.keywordPlus | X-1 | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | SELECTIVITY | - |
dc.subject.keywordPlus | MOLECULES | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.subject.keywordPlus | BEAMLINE | - |
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