A low LO power mixer utilizing the body effect

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We propose a single-stacked CMOS mixer that can operate at low local oscillator (LO) power condition with a new switching mechanism. Gating the body terminal makes it possible for the mixer to operate in a more ideal switching mode by utilizing the body effect. Biasing at near pinch-off region gives rise to beneficial aspect, low power dissipation. This circuit is composed of all PMOS transistors which draw only 0.275 mA from a supply voltage of 1.8 V. This circuit features gain and noise enhancement characteristic, low power consumption, and simple topology. The proposed mixer achieves conversion gain of 18 dB, noise figure of 9.1 dB with 0 dBm LO power, and power consumption as low as 0.5 mW.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2007-11
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.17, pp.799 - 801

ISSN
1531-1309
DOI
10.1109/LMWC.2007.908058
URI
http://hdl.handle.net/10203/86502
Appears in Collection
EE-Journal Papers(저널논문)
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