10-Gb/s Operation of RSOA for WDM PON

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dc.contributor.authorCho, Keun-Yeongko
dc.contributor.authorTakushima, Yko
dc.contributor.authorChung, Yun-Churko
dc.date.accessioned2013-03-06T06:43:26Z-
dc.date.available2013-03-06T06:43:26Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-09-
dc.identifier.citationIEEE PHOTONICS TECHNOLOGY LETTERS, v.20, pp.1533 - 1535-
dc.identifier.issn1041-1135-
dc.identifier.urihttp://hdl.handle.net/10203/86164-
dc.description.abstractWe report on the 10-Gb/s operation of the reflective semiconductor optical amplifier (RSOA) for the next-generation wavelength-division-multiplexed passive optical network (WDM PON). The bandwidth of the RSOA used in this experiment is merely 2.2 GHz. Nevertheless, a clear eye opening is obtained at 10 Gb/s by using the electronic equalizer processed offline. We investigate the impacts of the network's operating condition, (such as the injection power to the RSOA and the fiber length) on the performances of these equalizers. The results show that the RSOA-based WDM PON is operable at 10 Gb/s and the maximum reach can be extended to >20 km with the help of the forward error correction codes.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectLASER-
dc.title10-Gb/s Operation of RSOA for WDM PON-
dc.typeArticle-
dc.identifier.wosid000260119600032-
dc.identifier.scopusid2-s2.0-62549114254-
dc.type.rimsART-
dc.citation.volume20-
dc.citation.beginningpage1533-
dc.citation.endingpage1535-
dc.citation.publicationnameIEEE PHOTONICS TECHNOLOGY LETTERS-
dc.identifier.doi10.1109/LPT.2008.928834-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChung, Yun-Chur-
dc.contributor.nonIdAuthorTakushima, Y-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorPassive optical network (PON)-
dc.subject.keywordAuthorSemiconductor optical amplifier (SOA)-
dc.subject.keywordAuthorWavelength-division multiplexing (WDM)-
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