Correlation between the ordered structure and the valence-band splitting in highly strained CdxZn1-xTe epilayers

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Selected-area electron diffraction pattern (SADP) results showed two sets of {1/2 1/2 1/2} superstructure reflections with symmetrical intensities along the [110] axis, and the corresponding high-resolution transmission electron microscopy images indicated a doublet periodicity in the contrast of the {111} lattice planes. Photoluminescence spectra from highly strained CdxZn1-xTe/GaAs heterostructures showed that the valence-band splitting into the heavy hole and the light hole bands occurred as the Cd mole fraction was increased. The valence-band splitting is strongly correlated to the CuPtB-type ordered structure in highly strained heterostructures. (C) 2003 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2003-07
Language
English
Article Type
Article
Keywords

MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; LONG-RANGE ORDER; CDTE-FILMS; GAAS; CDZNTE; GROWTH; (111)B

Citation

APPLIED PHYSICS LETTERS, v.83, pp.269 - 271

ISSN
0003-6951
DOI
10.1063/1.1592622
URI
http://hdl.handle.net/10203/85827
Appears in Collection
MS-Journal Papers(저널논문)
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