DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, HS | ko |
dc.contributor.author | Lee, JeongYong | ko |
dc.contributor.author | Kim, TW | ko |
dc.contributor.author | Lee, DU | ko |
dc.contributor.author | Choo, DC | ko |
dc.contributor.author | Kim, MD | ko |
dc.date.accessioned | 2013-03-06T04:18:20Z | - |
dc.date.available | 2013-03-06T04:18:20Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2002-05 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10203/85777 | - |
dc.description.abstract | Selected area electron diffraction pattern and high-resolution transmission electron microscopy measurements on a ZnTe/ZnSe heterointerface grown on a GaAs(001) substrate showed two structures of the CuPtB-type ordering structures, one for each direction of the doublet periodicity on the {111} lattice planes along the [110] axis, and superstructure spots related to CuAu-I-type ordering. Auger electron spectroscopy measurements showed that the Se atoms were interdiffused into the ZnTe thin film and that the diffused Se atoms formed a ZnSexTe1-x layer, which might be related to the coexistence of the two types of ordered structures. The coexisting behavior of the two ordered structures are discussed. The present results can help improve the understanding of the formation mechanism and the coexisting behaviors of the two ordered structure near the ZnTe/ZnSe heterointerface. (C) 2002 American Institute of Physics. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MOLECULAR-BEAM EPITAXY | - |
dc.subject | VAPOR-PHASE EPITAXY | - |
dc.subject | LONG-RANGE ORDER | - |
dc.subject | CDTE-FILMS | - |
dc.subject | LAYERS | - |
dc.subject | GAAS | - |
dc.subject | ALLOYS | - |
dc.subject | CDZNTE | - |
dc.subject | (111)B | - |
dc.subject | GROWTH | - |
dc.title | Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces | - |
dc.type | Article | - |
dc.identifier.wosid | 000175069000020 | - |
dc.identifier.scopusid | 2-s2.0-0036573162 | - |
dc.type.rims | ART | - |
dc.citation.volume | 91 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 5657 | - |
dc.citation.endingpage | 5660 | - |
dc.citation.publicationname | JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.localauthor | Lee, JeongYong | - |
dc.contributor.nonIdAuthor | Lee, HS | - |
dc.contributor.nonIdAuthor | Kim, TW | - |
dc.contributor.nonIdAuthor | Lee, DU | - |
dc.contributor.nonIdAuthor | Choo, DC | - |
dc.contributor.nonIdAuthor | Kim, MD | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | MOLECULAR-BEAM EPITAXY | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | LONG-RANGE ORDER | - |
dc.subject.keywordPlus | CDTE-FILMS | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | CDZNTE | - |
dc.subject.keywordPlus | (111)B | - |
dc.subject.keywordPlus | GROWTH | - |
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