Simultaneous existence and atomic arrangement of CuPt-type and CuAu-I type ordered structures near ZnTe/ZnSe heterointerfaces

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Selected area electron diffraction pattern and high-resolution transmission electron microscopy measurements on a ZnTe/ZnSe heterointerface grown on a GaAs(001) substrate showed two structures of the CuPtB-type ordering structures, one for each direction of the doublet periodicity on the {111} lattice planes along the [110] axis, and superstructure spots related to CuAu-I-type ordering. Auger electron spectroscopy measurements showed that the Se atoms were interdiffused into the ZnTe thin film and that the diffused Se atoms formed a ZnSexTe1-x layer, which might be related to the coexistence of the two types of ordered structures. The coexisting behavior of the two ordered structures are discussed. The present results can help improve the understanding of the formation mechanism and the coexisting behaviors of the two ordered structure near the ZnTe/ZnSe heterointerface. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-05
Language
English
Article Type
Article
Keywords

MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; LONG-RANGE ORDER; CDTE-FILMS; LAYERS; GAAS; ALLOYS; CDZNTE; (111)B; GROWTH

Citation

JOURNAL OF APPLIED PHYSICS, v.91, no.9, pp.5657 - 5660

ISSN
0021-8979
URI
http://hdl.handle.net/10203/85777
Appears in Collection
MS-Journal Papers(저널논문)
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