DC Field | Value | Language |
---|---|---|
dc.contributor.author | Moon, CY | ko |
dc.contributor.author | Ikini, YS | ko |
dc.contributor.author | Chang, Kee-Joo | ko |
dc.date.accessioned | 2013-03-04T21:45:07Z | - |
dc.date.available | 2013-03-04T21:45:07Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-02 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S602 - S605 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://hdl.handle.net/10203/84262 | - |
dc.description.abstract | We investigate the atomic structure of B-P pairs in bulk Si through first-principles pseudopotential calculations, and find that a B-P pair is energetically most stable when P is positioned at a substitutional site in the second nearest neighborhood of B. We also examine the energetics of various I-s-B-P complexes that consist of B. P, and Si self-interstitial (I-s). In this complex, P also prefers a substitutional site in the second nearest neighborhood of B: however. its actual position depends oil the charge state of the complex. We find that the formation of the I-s-B-P complex is energetically more favorable than for the I-s-B complex, which is a major diffusing species in B-doped material. | - |
dc.language | English | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.subject | TRANSIENT ENHANCED DIFFUSION | - |
dc.subject | FIRST-PRINCIPLES | - |
dc.subject | BORON-DIFFUSION | - |
dc.subject | SILICON | - |
dc.subject | PHOSPHORUS | - |
dc.subject | IMPLANTATION | - |
dc.subject | PSEUDOPOTENTIALS | - |
dc.subject | TECHNOLOGY | - |
dc.subject | DEFECTS | - |
dc.title | Atomic structure of B-P and self-interstitial-B-P complexes in Si | - |
dc.type | Article | - |
dc.identifier.wosid | 000181337500113 | - |
dc.identifier.scopusid | 2-s2.0-0037305639 | - |
dc.type.rims | ART | - |
dc.citation.volume | 42 | - |
dc.citation.beginningpage | S602 | - |
dc.citation.endingpage | S605 | - |
dc.citation.publicationname | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Moon, CY | - |
dc.contributor.nonIdAuthor | Ikini, YS | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | B-P pairs | - |
dc.subject.keywordAuthor | self-interstitial Si | - |
dc.subject.keywordAuthor | I-B-P complex | - |
dc.subject.keywordPlus | TRANSIENT ENHANCED DIFFUSION | - |
dc.subject.keywordPlus | FIRST-PRINCIPLES | - |
dc.subject.keywordPlus | BORON-DIFFUSION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | PHOSPHORUS | - |
dc.subject.keywordPlus | IMPLANTATION | - |
dc.subject.keywordPlus | PSEUDOPOTENTIALS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | DEFECTS | - |
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