A new photoresist based on hyperbranched poly(arylene ether phosphine oxide)

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Hydroxy-terminated hyperbranched poly(arylene ether phosphine oxide) (P2) was synthesized via nucleophilic aromatic substitution reaction of AB(2) monomer, bis(4-hydroxyphenyl)-4'-fluorophenylphosphine oxide with K2CO3 as a base in NMP. The obtained polymer was dissolved well in NMP and DMSO, and casting of the solution gave a transparent film. The study on dissolution behavior of the film containing 10 wt% of diphenyliodonium-9,10-dimethoxyanthracene-2-sulfonate (DIAS) as a photoacid generator and 25 wt% of 4,4'-methylenebis-[2,6-bis(hydroxymethylphenyl) phenol] (MBHP) as a cross linker revealed that 0.5 wt% aqueous tetramthylammonium hydroxide (TMAH) solution was a suitable developer for this negative-type photoresist system. The photoresist system containing 10 wt% of DIAS and 25 wt% of MBHP showed the sensitivity of 9 mJ/cm(2) and the contrast of 1.6 when it was exposed to 365 nm light and postbaked at 120degreesC, followed by developing with 0.5 wt% aqueous TMAH solution at room temperature. The heat-treated (300degreesC, 30 min) negative image did not show any distortion.
Publisher
SPRINGER
Issue Date
2003-01
Language
English
Article Type
Article
Keywords

POLYMERS

Citation

POLYMER BULLETIN, v.49, no.5, pp.349 - 355

ISSN
0170-0839
URI
http://hdl.handle.net/10203/83509
Appears in Collection
CH-Journal Papers(저널논문)
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