H-related defect complexes in HfO2: A model for positive fixed charge defects

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Based on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (V-O) in HfO2. A defect complex of V-O and H behaves as a shallow donor for a wide range of Fermi levels, with a positive charge state, and this complex is energetically stable against its dissociation into V-O and H. We suggest that the V-O-H complex is responsible for the formation of positive fixed charges, which neutralize negative fixed charges during the postannealing process of SiOx/HfO2 stack. (C) 2004 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2004-05
Language
English
Article Type
Article
Keywords

HYDROGEN; PSEUDOPOTENTIALS; DENSITY; DEVICES; OXIDES

Citation

APPLIED PHYSICS LETTERS, v.84, pp.3894 - 3896

ISSN
0003-6951
DOI
10.1063/1.1738946
URI
http://hdl.handle.net/10203/82902
Appears in Collection
PH-Journal Papers(저널논문)
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