A critical examination of room temperature ferromagnetism in transition metal-doped oxide semiconductors

Abstract

The current situation with the transition metal-doped oxide semiconductors, TiO2 and ZnO, regarding room temperature ferromagnetism is critically examined. It is provisionally concluded that the apparent ferromagnetism found in some samples stems from secondary phases. There is an indication that the room temperature ferromagnetism may be achieved by adding additional Cu to Fe-doped ZnO. (C) 2003 Elsevier B.V. All rights reserved.