Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si

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High-resolution x-ray photoelectron spectroscopy (XPS) was applied to characterize the electronic structures for a series of high-k materials (HfO2)(x)(Al2O3)(1-x) grown on (100) Si substrate with different HfO2 mole fraction x. Al 2p, Hf 4f, O 1s core levels spectra, valence band spectra, and O 1s energy loss all show continuous changes with x in (HfO2)(x)(Al2O3)(1-x). These data are used to estimate the energy gap (E-g) for (HfO2)(x)(Al2O3)(1-x), the valence band offset (DeltaE(nu)) and the conduction band offset (DeltaE(c)) between (HfO2)(x)(Al2O3)(1-x) and the (100) Si substrate. Our XPS results demonstrate that the values of E-g, DeltaE(nu), and DeltaE(c) for (HfO2)(x)(Al2O3)(1-x) change linearly with x. (C) 2002 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2002-07
Language
English
Article Type
Article
Keywords

(100)SI; ZRO2

Citation

APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378

ISSN
0003-6951
DOI
10.1063/1.1492024
URI
http://hdl.handle.net/10203/81376
Appears in Collection
EE-Journal Papers(저널논문)
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