Functionalized one-dimensional devices and their interconnections

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dc.contributor.authorKim, Hko
dc.contributor.authorChung, HJko
dc.contributor.authorLee, Jhinhwanko
dc.contributor.authorKuk, Yko
dc.date.accessioned2013-03-03T21:24:50Z-
dc.date.available2013-03-03T21:24:50Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2003-02-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.42, pp.S134 - S136-
dc.identifier.issn0374-4884-
dc.identifier.urihttp://hdl.handle.net/10203/80508-
dc.description.abstractThe current CMOS (complementary metal oxide semiconductor) technology faces technical and economic difficulty in further miniaturization. Some predict that 1-dimensional structures may be used as alternative functional devices. New device structures may include 3-terminal field-effect, transistors or quantum wells aligned in a 1-dimensional chain. We proposed a method for constructing self-assembled, multiple quantum dots of < 10 nm in a semiconducting carbon nanotube, causing a spatial modulation of the band gap. We explain the limits of the current CMOS logic and suggest possible improvement.-
dc.languageEnglish-
dc.publisherKOREAN PHYSICAL SOC-
dc.subjectCARBON NANOTUBES-
dc.subjectMETALLOFULLERENES-
dc.subjectGROWTH-
dc.titleFunctionalized one-dimensional devices and their interconnections-
dc.typeArticle-
dc.identifier.wosid000181337500007-
dc.identifier.scopusid2-s2.0-0037306762-
dc.type.rimsART-
dc.citation.volume42-
dc.citation.beginningpageS134-
dc.citation.endingpageS136-
dc.citation.publicationnameJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.localauthorLee, Jhinhwan-
dc.contributor.nonIdAuthorKim, H-
dc.contributor.nonIdAuthorChung, HJ-
dc.contributor.nonIdAuthorKuk, Y-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthornanotube-
dc.subject.keywordAuthorfullerence-
dc.subject.keywordAuthorID Q-dot-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusMETALLOFULLERENES-
dc.subject.keywordPlusGROWTH-
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PH-Journal Papers(저널논문)
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